2SK2975 Datasheet PDF – RF Power MOSFET – Mitsubishi
2SK2975 is a MOSFET type transistor specifically designed for VHF/UHF power amplifiers applications.
Features
1. High power gain : Gpe≥8.4dB @Vdd=9.6V,f=450MHz,Pin=30dBm 2. High efficiency:55% typ. 3. Source case type seramic package(connected internally to source)
Absolute maximum ratings ( Tc=25°C )
1. Drain to source voltage : Vdss = 30 V 2. Gate to source voltage : Vgss = ± 20 V 3. Channel dissipation: Pch = 10 W
For drive stage and output stage of power amplifiers in VHF/UHF band portable radio sets.
Other data sheets are available within the file: K2975
2SK2975 Datasheet PDF Download
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